Q 1902067838.     In an intrinsic semiconductor the energy gap
E is 1.2eV. Its hole mobility is much smaller g
than electron mobility and independent of
temperature. What is the ratio between
conductivity at 600K and that at 300K?
Assume that the temperature dependence of
intrinsic carrier concentration `n_i` is given by
`n_i=n_0 exp(-E_g/(2k_B T))` where `n_0` is a constant.
`K_B = 8.62 xx 10^(-5) eV k^(-1)`

NCERT Chapter Solution 14/14.13

Solution for all Exercises of Physics Class 12 Chapter 14- SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

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Chapter 14 Solution

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